收藏本站
IRLI540N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
Drain-to-Source Breakdown Voltage
100
–––
––– V V GS = 0V, I D = 250μA
? V (BR)DSS / ? T J
Breakdown Voltage Temp. Coefficient
–––
0.11
–––
V/°C
Reference to 25°C, I D = 1mA ?
–––
–––
0.044 V GS = 10V, I D = 12A ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.053
?
V GS = 5.0V, I D = 12A ?
–––
–––
0.063 V GS = 4.0V, I D = 10A ?
––– R G = 5.0 ?, V GS = 5.0V
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
1.0
14
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
81
39
62
2.0 V V DS = V GS , I D = 250μA
––– S V DS = 25V, I D = 18A ?
25 V DS = 100V, V GS = 0V
μA
250 V DS = 80V, V GS = 0V, T J = 150°C
100 V GS = 16V
nA
-100 V GS = -16V
74 I D = 18A
9.4 nC V DS = 80V
38 V GS = 5.0V, See Fig. 6 and 13 ??
––– V DD = 50V
––– I D = 18A
ns
––– R D = 2.7 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
––– 4.5 –––
––– 7.5 –––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
––– 350 ––– V DS = 25V
C iss
C oss
C rss
C
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain to Sink Capacitance
––– 1800 ––– V GS = 0V
pF
––– 170 ––– ? = 1.0MHz, See Fig. 5 ?
––– 12 ––– ? = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
23
120
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.3 V T J = 25°C, I S = 18A, V GS = 0V ?
––– 190 290 ns T J = 25°C, I F = 18A
––– 1.1 1.7 μC di/dt = 100A/μs ??
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Notes:
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 1.9mH
R G = 25 ? , I AS = 18A. (See Figure 12)
? I SD ≤ 18A, di/dt ≤ 180A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? t=60s, ?=60Hz
? Uses IRL540N data and test conditions
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IRLIZ34N MOSFET N-CH 55V 22A TO220FP
IRLIZ44G MOSFET N-CH 60V 30A TO220FP
IRLL014NTR MOSFET N-CH 55V 2A SOT223
IRLL2703TR MOSFET N-CH 30V 3.9A SOT223
IRLL2705TR MOSFET N-CH 55V 3.8A SOT223
IRLL3303 MOSFET N-CH 30V 4.6A SOT223
IRLM120ATF MOSFET N-CH 100V 2.3A SOT-223
IRLML2402TR MOSFET N-CH 20V 1.2A SOT-23
相关代理商/技术参数
IRLI540NPBF 功能描述:MOSFET MOSFT 100V 20A 44mOhm 49.3nC LogLvl RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI610A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Advanced Power MOSFET
IRLI610ATU 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI620 制造商:IRF 制造商全称:International Rectifier 功能描述:Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A)
IRLI620A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET
IRLI620ATU 功能描述:MOSFET 200V N-Channel a-FET Logic Level RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI620G 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRLI620GPBF 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube